MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications
نویسندگان
چکیده
منابع مشابه
Light-emitting silicon pn diodes
We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which ...
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*Correspondence: Deren Yang, State Key Lab of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Zheda Road 38, Hangzhou 310027, China e-mail: [email protected] Silicon pn-junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski n-type silicon substrate. Their room-temperature near-infrared electroluminescence ...
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Sb-based pN heterojunction diodes at 6.2 Å, consisting of narrow bandgap p-type In0.27Ga0.73Sb and wide bandgap n-type In0.69Al0.41As0.41Sb0.59, have been fabricated and measured. These diodes show excellent electrical characteristics with an ideality factor of 1.2 and high current density. S-parameter measurements and subsequent analysis show that these diodes have RC-cutoff frequencies over 1...
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High frequency pN heterojunction diodes with cutoff frequencies over 1 THz have been fabricated using narrow bandgap high-mobility semiconductors. The pN heterojunction is composed of a 30 nm thick p-type In0.27Ga0.73Sb alloy and a 130 nm thick In0.69Al0.31As0.41Sb0.59 n-layer. A high-mobility n-type InAs0.66Sb0.34 contact layer is used to connect the mesa diode to a metal Ohmic contact. These ...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 1997
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(96)00977-3